npn BU2508AF 25/10/2012 comset semiconductors 1/3 08/11/2012 n n p p n n s s i i l l i i c c o o n n p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s the BU2508AF is silicon power transistor mounted in jedec to-3pf plastic package. they are designed for use in horizontal deflect ion circuits of color tv receivers. compliance to rohs. absolute maximum ratings symbol ratings value unit v ces collector- emitter voltage(v be = 0) 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 7.5 v i c collector current- continuous 8 a i cm collector current-peak 15 a i b base current- continuous 4 a i bm base current-peak 6 a p c collector power dissipation @ t c =25c 45 w t j junction temperature 150 c t stg storage temperature range -65~150 c thermal characteristics symbol ratings value unit r th j-c thermal resistance,junction to case 2.5 c/w
npn BU2508AF 25/10/2012 comset semiconductors 2/3 08/11/2012 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma i b = 0, l= 25mh 700 - - v v (br)ebo emitter-base breakdown voltage i e = 1ma i c = 0 7.5 - - v v ce(sat) collector-emitter saturation voltage i c = 4.5a i b = 1.1a - - 1.0 v v be(sat) base-emitter saturation voltage i c = 4.5a i b = 1.7a - - 1.1 v i ces collector cutoff current v ce = 1500v v be = 0 - - 1.0 ma v ce = 1500v, v be = 0 t c =125c - - 2.0 i ebo emitter cutoff current v eb = 7.5v i c = 0 - - 1.0 ma h fe dc current gain i c = 0.1a v ce = 5v - 13 - - h fe dc current gain i c = 4.5a v ce = 1v 4 - 7 - c ob output capacitance i e = 0; v cb = 10v f test = 1mhz - 80 - pf switching times t stg storage time i c = 4.5a , i b(end) = 1.1a l b = 6h -v bb = 4v; (-di b /dt= 0.6a/s) - - 6.0 s t f fall time - - 0.6 s
npn BU2508AF 25/10/2012 comset semiconductors 3/3 08/11/2012 mechanical data case to-3p (to-218) revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dim. mm min max a 20.70 21.30 b 14.70 15.30 c 4.80 5.20 d 0.90 1.10 f 3.20 3.40 h 3.70 4.30 j 0.50 0.70 k 16.40 17.00 l 1.90 2.10 n 10.80 11.00 q 5.60 6.00 r 1.80 2.20 s 3.10 3.50 t 8.70 9.30 u 0.55 0.75 pin 1 : emitter pin 2 : base pin 3 : collector
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